1.PANDA 3.0 modules use the industry's cutting-edge n-type monocrystalline TOPCon cell technology. With high quality,encapsulation materials and classic glass-backsheet structure, PANDA 3.0 modules are perfectly suited to the harsh environment and provide you with high reliability and quality assurance.
2.Wide-angle invisible soldering ribbon creates high-performance and high-looking components
Multi-busbar circular/triangular ribbons increase the optical utilization rate of the ribbon area from 5% to more than 40%; the "wide-angle ribbon stealth technology" based on total reflection can reduce light pollution within a certain angle range.
3.High Reliability
This module also has excellent low-light performance and can maintain stable power generation output even under relatively poor lighting conditions. This is due to the application of comprehensive LID (Light Induced Degradation)/LeTID (Potential Induced Degradation) attenuation suppression technology, which effectively reduces the energy loss of components in low-light environments and further increases power generation.
4.Ultra-low LID
Attenuation in the first year: 1%, annual attenuation: 0.4%.Provide long-term and stable power generation revenue for end customers.Lower degradation with anti-PID cell and encapsulation materials.
| Product number | 550 | 555 | 560 | 565 | 570 | 575 |
| quality assurance | ||||||
| product quality assurance | 12 years | |||||
| Power Output Guaranteed | Degrades 0.55% per year for 25 years | |||||
| Electrical performance parameters (STC) | ||||||
| Peak Power (Pmax) | 550 Wp | 555 Wp | 560 Wp | 565 Wp | 570 Wp | 575 Wp |
| Peak operating voltage (Vmpp) | 41.57 V | 41.76 V | 41.94 V | 42.13 V | 42.29 V | 42.47 V |
| Peak operating current (Impp) | 13.24 A | 13.30 A | 13.36 A | 13.42 A | 13.48 A | 13.54 A |
| Open circuit voltage (Voc) | 50.26 V | 50.46 V | 50.66 V | 50.86 V | 51.06 V | 51.26 V |
| Short circuit current (Isc) | 13.89 A | 14.07 A | 14.14 A | 14.20 A | 14.26 A | 14.32 A |
| Component efficiency | 21.29% | 21.48% | 21.68% | 21.87% | 22.07% | 22.26% |
| Power deviation (positive) | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% | 1.50% |
| Electrical performance parameters (NOCT) | ||||||
| Peak Power (Pmax) | 417.85 Wp | 421.67 Wp | 425.39 Wp | 429.24 Wp | 432.80 Wp | 436.57 Wp |
| Peak operating voltage (Vmpp) | 39.58 V | 39.77 V | 39.94 V | 40.12 V | 40.27 V | 40.44 V |
| Peak operating current (Impp) | 10.56 A | 10.60 A | 10.65 A | 10.70 A | 10.75 A | 10.80 A |
| Open circuit voltage (Voc) | 47.64 V | 47.83 V | 48.02 V | 48.21 V | 48.40 V | 48.59 V |
| Short circuit current (Isc) | 11.28 A | 11.34 A | 11.40 A | 11.45 A | 11.50 A | 11.55 A |
| maximum durable temperature | 42±2 °C | |||||
| temperature characteristics | ||||||
| Operating temperature | -40~85 °C | |||||
| Temperature coefficient (Pmax) | #NAME? | |||||
| Temperature Coefficient (Voc) | #NAME? | |||||
| Temperature Coefficient (Isc) | 0.046 %/°C | |||||
| System Integration Parameters | ||||||
| system voltage | 1000 VDC / 1500 VDC | |||||
| Fuse rated current | 30 A | |||||
| physical parameters | ||||||
| Component size (height/width/thickness) | 2278x1134x30 mm | |||||
| weight | 32.0 kg | |||||
| Cell type | Monocrystalline silicon | |||||
| Cell specification | 144×144 mm | |||||
| Cell Quantity | 144 | |||||
| glass type | Tempering | |||||
| glass thickness | 3.2 mm | |||||
| border type | Anodized aluminum alloy | |||||
| Junction box protection class | IP 68 | |||||
| connector type | MC4 | |||||
| Cable cross section | 4 mm2 | |||||
| cable length | 1200 mm | |||||