**Potential to reduce BOS costs**: This series of components has great potential to reduce BOS (system external components) costs and create higher economic benefits for investors.
**Semiconductor Industry Benchmark Performance**: This series of components uses semiconductor industry benchmark silicon wafer sizes, ensuring the highest level of performance and cost-effectiveness.
**Optimized power output**: The application of high-density packaging technology optimizes power output, thereby improving the performance of solar modules.
**Sustained high power generation efficiency**: The low attenuation rate of this component ensures continuous high power generation efficiency and creates more clean energy for users.
| Product number | 415 | 420 | 425 | 430 | 435 |
| quality assurance | 15 year Product Workmanship Warranty | ||||
| product quality assurance | 30 year Power Warranty | ||||
| Power Output Guaranteed | 1% rst year degradation,0.4% Annual Power Attenuation | ||||
| Electrical performance parameters (STC) | |||||
| Peak Power (Pmax) | 415 Wp | 420 Wp | 425 Wp | 430 Wp | 435 Wp |
| Peak operating voltage (Vmpp) | 41 V | 41.3 V | 41.5 V | 41.8 V | 42 V |
| Peak operating current (Impp) | 10.11 A | 10.17 A | 10.24 A | 10.3 A | 10.36 A |
| Open circuit voltage (Voc) | 49.4 V | 49.7 V | 49.9 V | 50.3 V | 50.6 V |
| Short circuit current (Isc) | 10.64 A | 10.69 A | 10.74 A | 10.81 A | 10.86 A |
| Component efficiency | 20.80% | 21% | 21.30% | 21.50% | 21.80% |
| Power deviation (positive) | 1% | 1% | 1% | 1% | 1% |
| Electrical performance parameters (NOCT) | |||||
| Peak Power (Pmax) | 313 Wp | 317 Wp | 320 Wp | 325 Wp | 328 Wp |
| Peak operating voltage (Vmpp) | 38.5 V | 38.7 V | 39 V | 39.3 V | 39.5 V |
| Peak operating current (Impp) | 8.13 A | 8.17 A | 8.21 A | 8.27 A | 8.3 A |
| Open circuit voltage (Voc) | 46.5 V | 46.8 V | 46.9 V | 47.3 V | 47.6 V |
| Short circuit current (Isc) | 8.58 A | 8.61 A | 8.65 A | 8.71 A | 8.75 A |
| maximum durable temperature | 43±2 °C | ||||
| temperature characteristics | |||||
| Operating temperature | -40~85 °C | ||||
| Temperature coefficient (Pmax) | -0.34 %/°C | ||||
| Temperature Coefficient (Voc) | -0.25 %/°C | ||||
| Temperature Coefficient (Isc) | 0.04 %/°C | ||||
| System Integration Parameters | |||||
| system voltage | 1500 V | ||||
| Fuse rated current | 20 A | ||||
| physical parameters | |||||
| Component size (height/width/thickness) | 1762x1134x30 mm | ||||
| weight | 21.8 kg | ||||
| Cell type | Monocrystalline silicon | ||||
| Cell Quantity | 144 | ||||
| glass type | Anti-reflective coating, tempered | ||||
| Type of sealing material | EVA | ||||
| border type | Anodized aluminum alloy | ||||
| Junction box protection class | IP 68 | ||||
| connector type | MC4 | ||||
| Cable cross section | 4 mm² | ||||